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Samsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year
SEOUL: A Samsung Electronics executive said on Tuesday that high-bandwidth memory (HBM) is expected to account for nearly 30% of Dynamic Random-Access Memory (DRAM) chipmakers’ total wafer capacity next year, up from about 20% currently. Samsung Electronics Executive Vice President Kim Taewoo said HBM and standard DRAM compete for the same wafer capacity, meaning expanding HBM output could constrain standard DRAM supply. HBM is a crucial component for AI computing, consisting of vertically stacked memory chips that allow processors to access vast amounts of data at high speeds. The market is d...
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